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Provisional Data Sheet No. PD-9.885
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET(R) TRANSISTOR
-100 Volt, 0.120, RAD HARD HEXFET
International Rectifier's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier's P-channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHN9150
P-CHANNEL
RAD HARD
Product Summary
Part Number IRHN9150 BVDSS -100V RDS(on) 0.120 ID -22A
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
I D @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mount Surface Temperature Weight
Pre-Radiation
IRHN9150
-22 -14 -88 150 1.2 20 500 -22 15 -5.5 -55 to 150 300 (for 5 seconds) 2.6 (typical)
oC
Units A
W W/K V mJ A mJ V/ns
g
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Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
Typ. Max. Units
-- -- 0.120 0.145 -4.0 -- -25 -250 -100 100 200 45 85 60 240 225 175 -- V V/C V S( ) A nA nC
Test Conditions
VGS = 0V, I D = -1.0 mA Reference to 25C, ID = -1.0 mA VGS = -12V, ID = -14A VGS = -12V, ID = -22A VDS = VGS, I D = -1.0 mA VDS > -15V, IDS = -14A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = -20V VGS = +20V VGS = -12V, ID = -22A VDS = Max. Rating x 0.5 VDD = -50V, ID = -22A, RG = 2.35
-100 -- -- -0.087 -- -- -2.0 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- TBD
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
LS
Internal Source Inductance
--
TBD
--
nH
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1100 310 55
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- -- -- -22 -88
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
A
VSD t rr Q RR t on
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Tj = 25C, IS = -22A, V GS = 0V Tj = 25C, IF = -22A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. -- -- -- -- -- -- -3.6 740 7.0 V ns C
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC Board
Min. Typ. Max. Units
-- -- -- -- 0.83 K/W TBD
Test Conditions
Soldered to a copper clad PC board
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Radiation Performance of P-Channel Rad Hard HEXFETs
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Radiation Characteristics
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used.
Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier P-Channel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environment and results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS I DSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
IRHN9150
100K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = -1.0 mA VGS = VDS , ID = -1.0 mA VGS = -20V VGS = +20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, ID = -14A TC = 25C, IS = -22 VGS = 0V
min.
max.
-100 -- -2.0 -4.0 -- -100 -- 100 -- -25 -- 0.120 -- -3.6
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS IPP di/dt L1 Drain-to-Source Voltage
Min. Typ Max. Min. Typ. Max. Units Test Conditions -- -- -80 -- -- -80 V Applied drain-to-source voltage during gamma-dot -- -100 -- -- -100 -- A Peak radiation induced photo-current -- -- -800 -- -- -160 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BV DSS
Typ.
-100
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Range (m)
~41
VDS Bias (V)
-100
VGS Bias (V)
+5
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Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)] Peak IL = -22A, VGS = -12V, 25 RG 200 ISD -22A, di/dt -140A/s, VDD BV DSS, T J 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
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Radiation Characteristics
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy~2.5 MeV), 30 nsec pulse. Study sponsored by NASA. Evaluation performed at Brookhaven National Labs. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions -- SMD-1
Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4 Dimension includes metallization flash 5 Dimension does not include metallization flash
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 6/96
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